00:00In the relentless pursuit of next-generation computing, Intel Foundry introduces the Intel 18A Process Node.
00:08Standing for 18 Angstroms, 18A is the most advanced node fully designed and produced in North America.
00:16It features an industry-first combination of technologies supported by a broad ecosystem of IP, EDA, and design services partners.
00:25It delivers better performance per watt and improved area efficiency, enabling new computing architectures for applications demanding the highest level of performance.
00:35Intel Foundry's Power Via introduces a first-of-its-kind backside power delivery technology.
00:42Traditionally, power is routed through the front side of the die, creating congestion.
00:48Power Via places power wires beneath the transistor layer, separating them from signal wires.
00:54By eliminating the need for power routing on the front side of the die, more resources become available to optimize signal routing.
01:03The result is a 10% density boost in cell utilization and a 4% improvement in ISO power performance.
01:11The connection to the transistor layer is made through an innovative nano-TSV, or through silicon via, which is 500 times smaller than TSVs used today.
01:21At the base of the power via stack, the Omni-MIM capacitor improves performance by providing unmatched on-die decoupling, further stabilizing power delivery by reducing voltage fluctuations.
01:35Omni-MIM can also be incorporated into Intel Foundry's 3D advanced packaging technologies, further achieving stable, reliable power in a multi-chiplet architecture.
01:46Ribbon-FET, a revolutionary leap in transistor technology, is featured in the 18A process.
01:53It uses ribbon-shaped channels surrounded by a gate, offering better control and higher drive current at all voltages.
02:00This results in faster transistor switching speeds and higher performance with a smaller footprint.
02:06The flexibility of multiple Ribbon-FET grids allow for fine-tuned power and performance across applications.
02:15The incredible combination of Ribbon-FET and Power Via paves the way for innovations that will shape the future of high-performance computing, artificial intelligence, mobile, and networking.
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